Bump with basic metallization and method for manufacturing the basic metallization

A method for manufacturing a bump on a terminal face of a semiconductor substrate, the method comprising:

• electrolyticly seeding of the terminal face with zincate such that numerous independent zinc particles are electrolytically deposited on the terminal face;
• electrolyticly seeding of the terminal face with palladium such that, in addition to the deposition of zinc particles, numerous independent palladium particles are deposited on to terminal face, said steps of electrolytically seeding with zincate and electrolytically seeding with palladium taking place as sucessive steps, one following the other;
• and
• subsequent to said steps of electrolyticly seeding of the terminal face with zincate and electrolyticly seeding of the terminal face with palladium, autocatalytically depositing a contact metallization on the terminal face, wherein a basic metallization is formed by the numerous independent zinc particles and the numerous independent palladium particles serving as nuclei for the contact metallization, with the numerous independent zinc particles and numerous independent palladium particles nucleating the terminal ice to generate the basic metallization to provide adhesion between the contact metallization and the terminal face.