Back to results
US 6,719,849 B2Granted
Single-substrate-processing apparatus for semiconductor process
AssigneeTokyo Electron Limited
InventorsTakahiro Horiguchi, Naofumi Oda
Life of this patent
Estimating the term…
Abstract
A single-substrate-processing apparatus includes an airtight process chamber, in which a worktable is supported by a pedestal. A conduction structure is arranged to conduct static electricity generated on the worktable and a wafer thereon to a grounded portion outside the process chamber. The conduction structure has a conductive film formed on insulating surfaces of the worktable and the pedestal.
Claims19
A single-substrate-processing apparatus for performing a semiconductor process, comprising:
- an airtight process chamber configured to process a target substrate;
- a ceramic heater disposed within the process chamber, and having a worktable configured to support and heat the target substrate, and an insulating pedestal connected to the worktable to support the worktable;
- and
- a conductive film formed on surfaces and connecting of the ceramic heater and the insulating pedestal, and electrically connected at a lower end of the pedestal to a grounded portion, which is disposed as a part of the process chamber or disposed outside the process chamber.
1 more element
Dependencies are inferred from the claim text.