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US 6,713,404 B2Granted
Methods of forming semiconductor constructions
AssigneeMicron Technology, Inc.
InventorYoshiki Hishiro
Life of this patent
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Abstract
The invention includes a semiconductor construction comprising a semiconductor substrate, and a first layer comprising silicon and nitrogen over the substrate. A second layer comprising at least 50 weight % carbon is over and physically against the first layer, and a third layer consisting essentially of a photoresist system is over and physically against the second layer. The invention also includes methodology for forming the semiconductor construction.
Claims19
A method of forming a semiconductor construction, comprising:
- providing a semiconductor substrate;
- forming a first layer comprising silicon and nitrogen over the substrate;
- forming a second layer comprising at least 50 weight % carbon over and physically against the first layer;
- forming a third layer consisting essentially of a photoresist system over and physically against the second layer;
- exposing the photoresist system to patterned light and subsequently heating the photoresist system;
- the second layer releasing acid into the photoresist system during the heating;
- and
- after the heating, exposing the photoresist system to a developing solvent.
5 more elements
A method of forming a semiconductor construction, comprising:
- providing a semiconductor substrate;
- forming a first layer comprising silicon and nitrogen over the substrate;
- forming a second layer comprising at least 50 weight % carbon over the first layer;
- forming a third layer consisting essentially of a photoresist system over and physically against the second layer;
- exposing a first portion of the third layer radiation while not exposing a second portion to the radiation;
- subjecting the third layer to conditions which cause either the exposed first portion or unexposed second portion of the photoresist system to release acid;
- the second layer also releasing acid as the third layer is exposed to the conditions;
- and
- after subjecting the third layer to the conditions, removing either the first or second portion selectively relative to the other of the first and second portion.
6 more elements
Dependencies are inferred from the claim text.