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US 6,674,108 B2Granted
Gate length control for semiconductor chip design
AssigneeHoneywell International Inc.
InventorsCheisan J. Yue, Eric E. Vogt, Todd N. Handeland
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes first and second polysilicon areas on a chip. The first polysilicon area corresponds to circuit elements of the semiconductor device. At least some of the first polysilicon corresponds to polysilicon gates. At least some of the second polysilicon area comprises contacts of the semiconductor device. Metal covers the polysilicon contacts.
Claims34
A semiconductor device comprising:
- first polysilicon forming circuit elements of the semiconductor device on a chip, wherein at least some of the circuit elements comprise polysilicon gates;
- second polysilicon forming polysilicon pads of the semiconductor device on the chip, wherein at least one of the polysilicon pads is on the chip, is located distally from the circuit elements, and is unconnected from the circuit elements;
- and,
- metal pads covering the polysilicon pads.
1 more element
A semiconductor device chip comprising:
- a first transistor comprising gate regions and alternating source and drain regions, wherein each gate region of the first transistor is between a pair of adjacent source and drain regions, and wherein each gate region of the first transistor comprises polysilicon;
- a second transistor comprising gate regions and alternating source and drain regions, wherein each gate region of the second transistor is between a pair of adjacent source and drain regions, and wherein each gate region of the second transistor comprises polysilicon;
- a third transistor comprising gate regions and alternating source and drain regions, wherein each gate region of the third transistor is between a pair of adjacent source and drain regions, and wherein each gate region of the third transistor comprises polysilicon;
- a plurality of polysilicon resistors;
- a plurality of non-capacitor polysilicon pads;
- and,
- contacts covering the non-capacitor polysilicon pads.
4 more elements
A semiconductor device comprising:
- a transistor having a gate, a source, and a drain, wherein the gate comprises a polysilicon gate;
- at least one polysilicon pad laterally distal and electrically isolated from all circuit elements of the semiconductor device;
- and,
- a metal pad covering the polysilicon pad.
1 more element
A semiconductor chip comprising:
- gate polysilicon forming at least one polysilicon gate;
- non-gate polysilicon forming polysilicon pads on the chip;
- and,
- metal pads covering the polysilicon pads, wherein the chip has a chip area, wherein the gate polysilicon and the non-gate polysilicon has a total polysilicon area, wherein the total polysilicon area comprises at least 13% of the chip area, wherein the gate polysilicon has a gate polysilicon area, and wherein the gate polysilicon area comprises 1% or less of the chip area.
1 more element
Dependencies are inferred from the claim text.