US 6,669,784 B2Granted

Gas processing apparatus for object to be processed

AssigneeTokyo Electron Limited

InventorsMunehisa Futamura, Teruo Iwata

Life of this patent

Estimating the term…

Loading patent…

Abstract

A resistance heating element 33 for heating a wafer W is embedded within a ceramic heater 22 that forms a susceptor for a semiconductor wafer W to be processed, and power lines 35 from the resistance heating element 33 extend out of the processing chamber 20. A sheathing bellows 38 that houses the power lines 35 in an insulated state is interposed between the ceramic heater 22 and a base plate 24 of the processing chamber 20, and an end piece 39 of the sheathing bellows 38 is connected by screws 40 to the ceramic heater 22 to provide a space 50 therebetween. The screws 40 are such as to permit the thermal expansion of the sheathing bellows 38. This configuration makes it possible to make the temperature distribution in the surface of the semiconductor wafer uniform and thus improve the uniformity of film formation, and also prevent corrosion of components such as the power lines and terminals, and suppress the generation of particles.

Claims10

Dependent claims

A gas processing apparatus for an object to be processed, comprising:

a processing chamber;
a susceptor, provided within said processing chamber, for supporting an object to be processed;
means for supplying a processing gas into said processing chamber to perform a predetermined process on said object;
a resistance heater embedded in said susceptor for heating said object;
a power line with one end thereof being led out from a surface of said susceptor that is connected to said resistance heater and the another being extended to exterior of said processing chamber;
a metal sheath interposed between said surface of said susceptor and a wall of said processing chamber, for surrounding said power line so as to house said power line in an insulated state, said sheath having an annular end piece provided at an end portion thereof adjacent to said surface of said susceptor;
and
means for connecting said annular end piece with said surface of said susceptor in such a manner that said end piece is not in contact with said surface of said susceptor and a space is formed between said end piece and said surface of said susceptor.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/060,171Filed 1 Feb 2002 · division
Priority: JP 9-1648789 Jun 1997
Published: US 2002/0096117 A125 Jul 2002
Granted: 30 Dec 2003
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10P 72/0432
Apparatus for thermal treatment: mainly by conduction
C23C 16/4586
The substrate being supported substantially horizontally: elements in the interior of the support, e.g. electrodes, heating or cooling devices
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered
C23C
Coating metallic material

Family

Application09/092,981Parent of this continuation-in-part · filed 8 Jun 1998
Application09/436,624Parent of this division · filed 9 Nov 1999
US 2002/0096117 A1Pre-grant publication · published 25 Jul 2002
US 6,372,048 B1Parent of this division
Application09/436,624Parent of this continuation-in-part
US 6,669,784 B2This patent

From the US filing history. Foreign family members aren’t listed.