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US 6,664,198 B1Granted
Method of forming a silicon nitride dielectric layer
AssigneeMicron Technology, Inc.
InventorsFernando Gonzalez, John Zhang, Er-Xuan Ping
Life of this patent
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Abstract
Methods of forming thin nitride dielectric layers for semiconductor devices are provided. Additionally, methods of forming capacitor structures utilizing thin nitride dielectric layers are provided. The thin nitride layers are formed by nitridizing the surface of a doped or undoped semiconductor substrate using a remote plasma nitridization or a rapid thermal nitridization to form a first growth of silicon nitride. A self-limiting second growth of silicon nitride is formed using a remote plasma nitridization. The resulting silicon nitride layers exhibit improved dielectric and leakage characteristics.
Claims48
A method of forming a thin dielectric layer for use in a semiconductor device comprising:
- providing a semiconductor substrate having a surface comprising silicon;
- and
- forming a silicon nitride layer on said surface, wherein the step of forming said silicon nitride layer comprises:
- nitridizing said surface of said substrate in a vacuum to form a first growth of silicon nitride;
- nitridizing said first growth of silicon nitride to form a second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise said silicon nitride layer.
2 more elements
A method of forming a thin dielectric layer for use in a semiconductor device comprising:
- providing a semiconductor substrate having a surface comprising silicon;
- doping said semiconductor substrate with a dopant in a vacuum;
- and
- forming a silicon nitride layer on said surface, wherein the step of forming said silicon nitride film comprises:
- nitridizing said surface of said substrate in a vacuum to form a first growth of silicon nitride;
- nitridizing said first growth of silicon nitride to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise said silicon nitride layer.
3 more elements
A method of forming a thin dielectric layer for use in a semiconductor device comprising:
- providing a semiconductor substrate having a surface comprising silicon;
- doping said semiconductor substrate with a dopant in a vacuum, wherein said doping comprises a rapid thermal anneal;
- and
- forming a silicon nitride layer on said surface, wherein the step of forming said silicon nitride layer comprises:
- nitridizing said surface of said substrate in said vacuum using rapid thermal nitridization to form a first growth of silicon nitride subsequent to said doping;
- nitridizing said first growth of silicon nitride using remote plasma nitridization to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise said silicon nitride layer.
3 more elements
A method of forming a thin dielectric layer for use in a semiconductor device comprising:
- providing a semiconductor substrate comprising silicon;
- doping said semiconductor substrate with a dopant in a vacuum, wherein said doping comprises a rapid thermal anneal;
- and
- forming a silicon nitride layer on said surface, wherein the step of forming said silicon nitride layer comprises:
- nitridizing said surface of said substrate in said vacuum using remote plasma nitridization to form a first growth of silicon nitride subsequent to said doping;
- nitridizing said first growth of silicon nitride using remote plasma nitridization to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise said silicon nitride layer.
3 more elements
A method of forming a thin dielectric layer for use in a semiconductor device comprising:
- providing a semiconductor substrate comprising silicon;
- doping said semiconductor substrate with a dopant in a vacuum, wherein said doping comprises a rapid thermal anneal;
- and
- forming a silicon nitride layer on said surface, wherein the step of forming said silicon nitride layer comprises:
- nitridizing said surf a of said substrate in said vacuum using remote plasma nitridization to form a first growth of silicon nitride subsequent to said doping;
- nitridizing said first growth of silicon nitride using rapid thermal nitridization to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise said silicon nitride layer.
3 more elements
A method of forming a thin dielectric layer for use in a semiconductor device comprising:
- providing a semiconductor substrate having a surface comprising silicon;
- placing said semiconductor substrate in a vacuum;
- doping said semiconductor substrate with a dopant in said vacuum, wherein said doping comprises a rapid thermal anneal;
- and
- forming a silicon nitride layer on said surface, wherein the step of forming said silicon nitride layer comprises:
- nitridizing said surface of said substrate in said vacuum using remote plasma nitridization utilizing NH3 to form a first growth of silicon nitride subsequent to said doping;
- nitridizing said first growth of silicon nitride using remote plasma nitridization utilizing N2 to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise said silicon nitride layer.
4 more elements
A method of forming a capacitor:
- forming a lower capacitor electrode;
- placing said lower capacitor electrode in a vacuum;
- doping said lower electrode in said vacuum;
- forming a silicon nitride layer on the surface of said lower electrode, wherein said step of forming said silicon nitride layer comprises:
- nitridizing said surface of said lower electrode in said vacuum to form a first growth of silicon nitride;
- nitridizing said first growth of silicon nitride to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise said silicon nitride layer;
- and
- forming an upper capacitor electrode.
5 more elements
A method of forming a capacitor:
- forming a lower capacitor electrode;
- placing said lower capacitor electrode in a vacuum;
- doping said lower electrode in said vacuum;
- forming a silicon nitride layer on the surface of said lower electrode, wherein said step of forming said silicon nitride layer comprises:
- nitridizing said surface of said lower electrode in said vacuum using rapid thermal nitridization to form a first growth of silicon nitride subsequent to said doping;
- nitridizing said first growth of silicon nitride in said vacuum using remote plasma nitridization to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise said silicon nitride layer;
- and
- forming an upper capacitor electrode.
5 more elements
The method as claimed in claim 34 wherein said n-type dopant is selected from the group consisting of arsenic or phosphorous.
A method of forming a capacitor:
- forming a lower capacitor electrode;
- placing said lower capacitor electrode in a vacuum;
- doping said lower electrode in said vacuum;
- forming a silicon nitride layer on the surface of said lower electrode, wherein said step of forming said silicon nitride layer comprises:
- nitridizing said surface of said lower electrode in said vacuum using remote plasma nitridization to form a first growth of silicon nitride subsequent to said doping;
- nitridizing said first growth of silicon nitride in said vacuum using rapid thermal nitridization to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise said silicon nitride layer;
- and
- forming an upper capacitor electrode.
5 more elements
A method of forming a capacitor:
- forming a lower capacitor electrode, wherein said electrode comprises polysilicon;
- placing said lower capacitor electrode in a first process chamber under vacuum;
- doping said lower electrode in said first process chamber, wherein said doping comprises a phosphorous anneal utilizing a rapid thermal process;
- forming a silicon nitride layer less than about 40 Å thick on the surface of said lower electrode, wherein said step of forming said silicon nitride layer comprises:
- nitridizing said surface of said lower electrode in said first process chamber using remote plasma nitridization utilizing NH3 at a temperature of about 700-800° C. to form a first growth of silicon nitride;
- placing said lower electrode in a second process chamber;
- nitridizing said first growth of silicon nitride in said second process chamber using remote plasma nitridization utilizing N2 at a temperature of about 700-800° C. to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise said silicon nitride layer;
- and
- forming an upper capacitor electrode.
6 more elements
A method of forming a thin dielectric layer for use in a semiconductor device comprising:
- providing a semiconductor substrate comprising polysilicon;
- placing said semiconductor substrate in a process chamber, wherein said process chamber is under vacuum;
- doping said semiconductor substrate in said process chamber, wherein said doping comprises a rapid thermal anneal utilizing a phosphorous, arsenic, or boron species;
- nitridizing said surface of said substrate in said process chamber to form a first growth of silicon nitride;
- and
- nitridizing said first growth of silicon nitride using remote plasma nitridization to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise a silicon nitride layer.
3 more elements
A method of forming a thin dielectric layer for use in a semiconductor device comprising:
- providing a semiconductor substrate comprising polysilicon;
- placing said semiconductor substrate in a first process chamber, wherein said process chamber is under vacuum;
- doping said semiconductor substrate in said first process chamber, wherein said doping comprises a rapid thermal anneal utilizing a phosphorous, arsenic, or boron species;
- nitridizing said surface of said substrate in said first process chamber to form a first growth of silicon nitride;
- placing said substrate in a second process chamber;
- and
- nitridizing said first growth of silicon nitride in said second process chamber using remote plasma nitridization to form a self-limiting second growth of silicon nitride, wherein said first growth and said second growth of silicon nitride together comprise a silicon nitride layer.
4 more elements
A method of forming a tin dielectric layer for use in a semiconductor device comprising:
- providing a semiconductor substrate comprising polysilicon;
- placing said semiconductor substrate in a process chamber, wherein said process chamber is under vacuum;
- doping said semiconductor substrate in said process chamber, wherein said doping comprises a rapid thermal anneal utilizing a phosphorous, arsenic, or boron species;
- nitridizing said surface of said substrate in said process chamber during and after said doping using rapid thermal nitridization utilizing NH3 carried out at a temperature of about 700-800° C. to form a first growth of silicon nitride;
- and
- nitridizing said first growth of silicon nitride in said process chamber using remote plasma nitridization utilizing N2 carried out at a temperature of about 700-800° C. to form a self-limiting second growth of silicon nitride, wherein in said first growth and said second growth of silicon nitride together comprise a silicon nitride layer having a thickness of less than about 40 Å.
3 more elements
Dependencies are inferred from the claim text.