Semiconductor-on-insulator annealing method
AssigneeCanon Kabushiki Kaisha
InventorsHiroshi Miyabayashi, Nobuhiko Sato, Masataka Ito
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Abstract
The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less than the melting point of a semiconductor, annealing is executed in a state wherein a flow of a reducing atmospheric gas parallel to the surface of the SOI substrate is generated near this surface.
Claims12
A semiconductor-on-insulator (SOI) substrate annealing method comprising annealing an SOI substrate having an SOI layer with a thickness of less than 100 nm in a reducing atmosphere such that a flow of a reducing atmospheric gas parallel to a surface of the SOI substrate is generated near the surface of the SOI substrate by supplying the reducing atmospheric gas from a gas supply port provided near an edge portion of the SOI substrate, wherein a flow velocity of the reducing atmospheric gas near the surface of the SOI substrate is not less than an average flow velocity of the reducing atmospheric gas in a reactor.
A semiconductor-on-insulator (SOI) substrate annealing method comprising annealing an SOI substrate having an SOI layer with a thickness of less than 100 nm in a reducing atmosphere such that a flow of a reducing atmospheric gas parallel to a surface of the SOI substrate is generated near the surface of the SOI substrate by rotating the SOI substrate.
Dependencies are inferred from the claim text.