Method of making thermally stable planarizing films
AssigneeInternational Business Machines Corporation
InventorsOmer H. Dokumaci, Bruce B. Doris, Michael P. Belyansky
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Abstract
Disclosed is a method of protecting semiconductor areas while exposing a structures for processing on a semiconductor surface, the method comprising depositing a planarizing high density plasma film of a silicon compound, selected from the group silicon oxide and silicon nitride, depositing a planarized polymer film to a thickness effective in protecting said high density plasma film while leaving high density plasma excess exposed, and etching away said high density plasma excess.
Claims20
A method of obtaining thermally stable planarizing films while exposing structures for further processing, the method comprising:
- depositing a planarizing silicon compound over a substrate comprising a pattern of structures to planarize said substrate by filling spaces between said structures, wherein said silicon compound film comprises silicon oxide or silicon nitride;
- forming a planarized organic polymer film over the substrate to cover said structures and said silicon compound film filling said spaces between said structures, wherein excess silicon compound film on top of a structure is exposed;
- and
- etching away said exposed silicon compound film on top of said structure so as to expose said structure, wherein said organic polymer film protects the substrate during said etching.
A method of obtaining thermally stable planarizing films while exposing structures for further processing, the method comprising:
- depositing a planarizing silicon compound film over a substrate to fill spaces formed between a plurality of gate structures on said substrate;
- forming a planarized organic polymer film over said substrate to cover said gate structures and said silicon compound filling said spaces between said gate structures, wherein said excess silicon compound film on top of a gate structure is exposed;
- etching away said exposed silicon compound on top of said gate structure so as to expose said gate structure, wherein said organic polymer film protects said substrate during said etching;
- and
- removing said planarized organic polymer film.
Dependencies are inferred from the claim text.