Method of depositing metal onto a substrate
AssigneeCypress Semiconductor Corporation
InventorIvan Petrov Ivanov
Life of this patent
Estimating the term…
Loading patent…
AssigneeCypress Semiconductor Corporation
InventorIvan Petrov Ivanov
Estimating the term…
A method for depositing a metal layer on a substrate includes the steps of depositing a first metal layer at a first deposition temperature; depositing a second metal layer on the first metal layer at a second deposition temperature higher than the first deposition temperature; reducing at least one of a growth rate and a temperature of at least the second metal layer; and depositing a third metal layer on the second metal layer. Preferably, the growth rate is reduced substantially to zero and the temperature is reduced to a point below which the second metal layer ceases to flow. By interrupting the processing the metal layer prior to the third metal layer forming step by the reducing and/or cooling step, the formation of whiskers and other similar thermal stress-induced defects is suppressed or inhibited, resulting in a substantially smooth and substantially defect free metal layer.
A method of metallizing a substrate, comprising the steps of:
Dependencies are inferred from the claim text.