Expanded implantation of contact holes
AssigneeMicron Technology, Inc.
InventorsHoward E. Rhodes, Kirk D. Prall, Philip J. Ireland, Kenneth N. Hagen
Life of this patent
Estimating the term…
Abstract
A method of forming electrical contacts includes the step of implanting ions into a contact hole at an angle to create an enlarged plug enhancement region at the bottom of a contact hole. Thus, even if the contact hole is misaligned, over-sized, or over-etched, the enlarged plug enhancement region contains subsequently formed barrier layers and other conductive materials to reduce current leakage into the underlying substrate or into adjacent circuit elements.
Claims27
A method of forming a contact in an integrated circuit, the method comprising the acts of:
- forming an active region in a substrate;
- disposing dielectric material over the active region;
- forming a contact hole in the dielectric material to expose at least a portion of the active region, the contact hole having side walls, and the exposed portion of the substrate forming a bottom surface of the contact hole;
- implanting a dopant to form a plug implantation region in the bottom surface of the contact hole which extends into the substrate beneath the dielectric material adjacent the side walls;
- disposing titanium in the contact hole;
- disposing titanium nitride over the titanium;
- annealing the substrate to form titanium silicide on the bottom surface;
- and
- disposing a conductive material in the contact hole.
A method of forming a contact in an integrated circuit, the method comprising the acts of:
- disposing dielectric material over a substrate;
- forming a contact hole in the dielectric material to expose at least a portion of the substrate, the contact hole having side walls, and the exposed portion of the substrate forming a bottom surface of the contact hole;
- implanting a dopant to form a plug implantation region in the bottom surface of the contact hole which extends into the substrate beneath the layer of dielectric material adjacent the side walls;
- disposing a barrier material in the contact hole;
- and
- disposing a conductive material in the contact hole.
A method of forming a contact in an integrated circuit, the method comprising the acts of:
- forming an active region in a substrate;
- forming a field implant region in the substrate adjacent the active region;
- forming a field oxide region over the field implant region;
- disposing dielectric material over the field oxide region and over the active region;
- forming a contact hole in the dielectric material to expose a portion of the active region, a portion of the field oxide region, and a portion of the field implant region, the contact hole having side walls and a bottom surface;
- implanting a dopant to form a plug implantation region in the bottom surface of the contact hole which extends into the substrate beneath dielectric material adjacent the side walls;
- disposing a silicide on the bottom surface of the contact hole, the silicide being completely contained within the plug implantation region;
- and
- disposing a conductive material in the contact hole.
A method of forming a contact in an integrated circuit, the method comprising the acts of:
- forming an active region in a substrate;
- disposing a dielectric material over the active region;
- forming a contact hole passing through the dielectric material and partially through the active region, the contact hole having side walls and a bottom surface;
- implanting a dopant to form a plug implantation region in the bottom surface of the contact hole which extends into the substrate beneath the side walls;
- disposing a silicide on the bottom surface of the contact hole;
- and
- disposing a conductive material in the contact hole.
Dependencies are inferred from the claim text.