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US 6,617,265 B2Granted
Photomask and method for manufacturing the same
AssigneeHitachi, Ltd.
InventorsToshihiko Tanaka, Norio Hasegawa
Life of this patent
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Abstract
A resist mask having a satisfactory resolution effect may be obtained even in the case of use of exposure light having a wavelength of 200 nm or more. An opaque pattern 2a comprising an organic layer for transferring a pattern is constituted by a multi-layer formed by a photo-absorptive organic layer 3a having an light shielding effect or a light attenuating effect even relative to exposure light having a wavelength of 200 nm or more, and a resist layer 4a for chiefly patterning this.
Claims14
A method of manufacturing a photomask comprising:
- providing a mask substrate transparent to an exposure light;
- depositing a first organic layer on the mask substrate for absorbing the exposure;
- depositing a second organic layer having a photosensitive effect on said first organic layer;
- exposing a desired pattern in said second organic layer;
- developing said exposed second organic layer thereby patterning said second organic layer;
- and
- patterning said first organic layer by using said patterned second organic layer as a masking layer thereby forming an attenuation pattern.
4 more elements
Dependencies are inferred from the claim text.