Method for making a silicon substrate comprising a buried thin silicon oxide film

A method of fabricating a silicon substrate comprising a thin buried silicon oxide layer, the method comprising:

• producing a first element comprising a first silicon body, wherein a main surface of the first element is coated with a buffer layer comprising germanium, a thin silicon layer, and a first thin silicon oxide layer, in that order;
• producing a second element comprising a second silicon body, wherein a main surface of the second element is coated with a second thin silicon oxide layer;
• bonding the first element to the second element such that the first thin silicon oxide layer of the first element is in contact with the second thin silicon oxide layer of the second element;
• and
• removing the buffer layer in order to recover the silicon substrate comprising the thin buried silicon oxide layer and a reusable silicon substrate.

A method of fabricating a silicon substrate comprising a thin buried silicon oxide layer, the method comprising:

• producing a first element comprising a silicon body, wherein a main surface of the first element is coated with a buffer layer comprising germanium, a thin silicon layer, and a thin silicon oxide layer, in that order;
• obtaining a second element comprising a silicon body;
• bonding the first element to the second element such that the thin silicon oxide layer of the first element is in contact with the silicon body of the second element;
• and
• removing the buffer layer in order to recover the silicon substrate comprising the thin buried silicon oxide layer and a reusable silicon substrate.