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US 6,605,534 B1Granted
Selective deposition of a conductive material
AssigneeInternational Business Machines Corporation
InventorsDean S. Chung, David V. Horak, Erick G. Walton
Life of this patent
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Abstract
The present invention provides a method of selectively inhibiting the deposition of a conductive material within desired regions of a semiconductor device. A seed layer is rendered ineffective to the electroplating in select regions of the substrate, by either the removal or the poisoning of the seed layer in select regions.
Claims12
A method of forming circuit features, comprising;
- providing a substrate having at least one cavity therein;
- depositing a liner over a surface of the substrate;
- depositing a seed layer over the liner;
- rendering the seed layer ineffective to electroplating in select regions of the substrate by poisoning select regions of the seed layer using a method selected from the group consisting of:
- chemically converting select regions of the seed layer into an electroplating inhibitor, which comprises exposing the seed layer to a chemical bath;
- and heating select regions of the seed layer using a patterned laser heater;
- and
- electroplating a conductive material within the at least one cavity.
5 more elements
A method of forming a semiconductor device, comprising:
- providing a substrate having at least one feature therein;
- depositing a seed layer over the substrate;
- poisoning select regions of the seed layer using a method selected from the group consisting of:
- chemically converting select regions of the seed layer into an electroplating inhibitor, which comprises exposing the seed layer to a chemical bath;
- and heating select regions of the seed layer using a pattern laser heater;
- and
- plating a conductive material on the seed layer.
4 more elements
Dependencies are inferred from the claim text.