Structure for an electrical contact to a thin film in a semiconductor structure and method for making the same

A method of fabricating an electrical contact in an integrated circuit, the method comprising:

• providing an insulating layer;
• forming a conductive container in the insulating layer;
• forming a depression in the insulating layer proximate the conductive container;
• forming an additional depression in the insulating layer proximate the conductive container;
• forming a contact by depositing a conductive material within a portion of the container and into the depression, wherein the contact makes electrical contact to the conductive container;
• and
• forming an additional contact by depositing a conductive material within a portion of the container and into the additional depression, wherein the additional contact makes electrical contact to the conductive container and wherein a conductive film directly contacts the insulating layer within the conductive container.

A method of fabricating an electrical contact to a conductive film of an integrated circuit, the method comprising:

• forming a layer of material having a top surface and an interior portion;
• forming a first container in the layer of material such that the first container has an interior surface and such that the first container extends from the top surface into the interior portion of the layer of material;
• conformally forming a conductive film over a portion of the interior surface of the first container and a portion of the top surface such that the conductive film extends over the top surface up to an edge, the edge being proximate the first container;
• forming a second container in the layer of material adjacent the edge such that the second container extends from the top surface into the interior portion of the layer of material;
• and
• forming a contact to make electrical contact to the conductive film such that the contact fills an open portion of the first container and an open portion of the second container.