Transient fuse for charge-induced damage detection

A method of detecting plasma damage, comprising the steps of:

• forming at least one device in a semiconductor body;
• forming a first dielectric layer over said semiconductor body;
• forming a first conductive layer over said dielectric;
• patterning and etching said first conductive layer using a plasma reactor to form a plurality of interconnect lines, at least one transient fuse having a plurality of closely spaced structures, and at least one antenna, said at least one transient fuse coupled to both said at least one device and said at least one antenna;
• and
• evaluating said device for charge-induced damage.