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US 6,583,507 B1Granted
Barrier for capacitor over plug structures
OwnerBum Ki Moon, Nicolas Nagel +1inventors
InventorsBum Ki Moon, Nicolas Nagel, Gerhard Adolf Beitel
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Abstract
An improved barrier stack for reducing plug oxidation in capacitor-over-plug structures is disclosed. The barrier stack is formed on a non-conductive adhesion layer of titanium oxide. The barrier stack includes first and second barrier layers wherein the second barrier layer covers the top surface and sidewalls of the first barrier layer. In one embodiment, the first barrier layer comprises Ir and the second barrier layer comprises IrOx. Above the barrier stack is formed a capacitor.
Claims24
An integrated circuit having a capacitor over plug structure comprising:
- a semiconductor substrate having a dielectric layer formed on its surface;
- an adhesion layer on the surface of the dielectric layer;
- a plug formed on the dielectric layer, the plug surface is coplanar with the surface of the adhesion layer;
- a capacitor formed over the adhesion layer in contact with the plug;
- and
- first and second conductive barrier layers between the capacitor and adhesion layer, the first conductive layer in contact with the adhesion layer and plug, the second barrier layer covering a top surface and sidewalls of the first barrier layer and is in contact with the adhesion layer and capacitor.
3 more elements
Dependencies are inferred from the claim text.