Tuning absorption levels during laser thermal annealing
AssigneeAdvanced Micro Devices, Inc.
InventorsCyrus E. Tabery, Eric N. Paton, Bin Yu, Qi Xiang, Robert B. Ogle
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Abstract
A method of manufacturing a semiconductor device includes forming a gate electrode over a substrate, introducing dopants into the substrate, forming a tuning layer over at least a portion of the substrate, and activating the dopants using laser thermal annealing. The tuning layer causes an increase or a decrease in the amount of fluence absorbed by the portion of substrate below the tuning layer in comparison to an amount of fluence absorbed by a portion of substrate not covered by the tuning layer. Additional tuning layers can also be formed over the substrate.
Claims20
A method of manufacturing a semiconductor device, comprising the steps of:
- forming semiconductor features over a substrate, the substrate having a first region and a second region, each of the first region and the second region including a plurality of the semiconductor features;
- introducing ions into the substrate to form active regions in the substrate;
- forming a tuning layer over at least a portion of the substrate;
- and
- activating the active regions by laser thermal annealing using a laser, wherein a transmissivity of fluence by the tuning layer differs between the first region and the second region.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode over a substrate;
- introducing ions into the substrate to form source/drain regions in the substrate proximate to the gate electrode;
- forming a tuning layer over at least a portion of the substrate;
- and
- activating the source/drain regions by laser thermal annealing using a laser, wherein forming the tuning layers includes
- forming a first layer of tuning material over the substrate, and
- removing portions of the first layer to form the tuning layer.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode over a substrate;
- introducing ions into the substrate to form source/drain regions in the substrate proximate to the gate electrode;
- forming a tuning layer over at least a portion of the substrate, the tuning layer is formed from a material having adjustable tuning properties;
- adjusting the tuning properties of the tuning layer after formation of the tuning layer;
- and
- activating the source/drain regions by laser thermal annealing using a laser after the tuning properties of the tuning layer have been adjusted.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming semiconductor features over a substrate, the substrate having a first region and a second region with a fluence absorption characteristic in the first region different than a fluence absorption characteristic in the second region;
- forming a tuning layer over at least a portion of the substrate;
- and
- laser thermal annealing using a laser, wherein
- the tuning layer adjusts the amount of fluence absorbed during the step of laser thermal annealing, wherein the first region absorbs an equal amount of fluence during the laser thermal annealing as absorbed by the second region.
Dependencies are inferred from the claim text.