Method of manufacturing III-nitride semiconductor devices
AssigneeOpto Tech Corporation
InventorChing-ting Lee
Life of this patent
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Abstract
A method for manufacturing III-nitride semiconductor devices is disclosed. The method employs oxidation and sulfurated treatment to reduce the specific contact resistance between metal and p-type III-nitride semiconductors. The method includes surface treatment of p-type III-nitride semiconductors using (NH4)2Sx solution to remove the native oxide from their surface; evaporating metal layer onto the surface-treated p-type III-nitride semiconductors; and then alloy processing the metals and the p-type III-nitride semiconductor with thermal alloy treatment. The method may further include a pre-oxidation step prior to the sulfurated treatment. In this way, ohmic contact can be formed between the metal layer and the p-type III-nitride semiconductors.
Claims14
A method for forming ohmic contact between metal layer and p-type III-nitride layer, comprising the steps of:
- dipping samples formed with p-type 1II-nitride layer into ammonium sulfide solution to remove native oxide from the surface of said p-type III-nitride layer;
- cleaning and drying said samples;
- evaporating metal layer onto the surface of said p-type III-nitride layer;
- and
- processing said samples with thermal alloy treatment.
A method for forming ohmic contact between metal layer and p-type III-nitride layer, comprising the steps of:
- performing oxidation treatment to samples formed with p-type III-nitride layer;
- dipping said samples into ammonium sulfide solution to remove oxide from the surface of said p-type III-nitride layer;
- cleaning and drying said samples;
- evaporating metal layer onto the surface of said p-type III-nitride layer;
- and
- processing said samples with thermal alloy treatment.
A method for manufacturing Group III-nitride semiconductor devices, comprising the steps of:
- growing devices's structures which include p-type III-nitride layer on a substrate;
- dipping said samples into ammonium sulfide solution to remove native oxide from the surface of said p-type III-nitride layer;
- cleaning and drying said samples;
- evaporating metal layer onto the surface of said p-type III-nitride layer;
- and
- processing said samples with thermal alloy treatment.
A method for manufacturing Group III-nitride semiconductor devices, comprising the steps of:
- growing devices's structures which include p-type III-nitride layer on a substrate;
- performing oxidation treatment to said samples;
- dipping said samples into ammonium sulfide solution to remove oxide from the surface of said p-type III-nitride layer;
- cleaning and drying said samples;
- evaporating metal layer onto the surface of said p-type III-nitride layer;
- and
- processing said samples with thermal alloy treatment.
Dependencies are inferred from the claim text.