Method of reworking photoresist layer
AssigneeUnited Microelectronics Corp.
InventorChia-Chieh Yu
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Abstract
A method of reworking a photoresist layer. A silicon chip having an insulation layer, a bottom anti-reflection coating and a photoresist layer thereon is provided. The photoresist layer has already been light-exposed and developed. A wet etching operation is carried out to remove a large portion of the photoresist layer. A low-temperature plasma treatment incapable of transforming the anti-reflection coating structure is conducted to remove the hardened residual photoresist material. A new photoresist layer is formed over the bottom anti-reflection coating.
Claims6
A method of reworking a photoresist layer, comprising the steps of:
- providing a silicon chip having an insulation layer, a bottom anti-reflection coating and a first photoresist layer thereon;
- removing a portion of the first photoresist layer;
- performing a low-temperature plasma treatment to remove the remaining first photoresist material from the bottom anti-reflection coating, wherein the low-temperature plasma treatment is conducted at a temperature around 150° C. or less and is incapable of transforming the anti-reflection coating;
- and
- forming a second photoresist layer over the bottom anti-reflection coating.
Dependencies are inferred from the claim text.