Device formation method for preventing pattern shift caused by glass layer reflow

Abstract

A semiconductor device formation method for preventing pattern shift caused by reflow of a glass layer in subsequent thermal processes. An insulating layer having thermal stability at a glass layer reflow temperature of 700° C.-1,000° C. is deposited over a semiconductor substrate to cover a resulting structure formed on the semiconductor substrate. Subsequently, a glass layer is deposited on the insulating layer to planarize topologies, and the glass layer is selectively removed to expose parts of the insulating layer with which conducting patterns are to be contacted. Thereafter, a conducting pattern is formed on the exposed parts of the insulating layer. Using the method, it is possible to prevent the shift of the conducting pattern because the conducting patterns are in contact with the insulating layer having thermal stability.

Dependencies are inferred from the claim text.