Plasma process device
AssigneesTadahiro Ohmi, Sharp Kabushiki Kaisha
InventorsMasaki Hirayama, Tadahiro Ohmi, Tatsushi Yamamoto, Takamitsu Tadera
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AssigneesTadahiro Ohmi, Sharp Kabushiki Kaisha
InventorsMasaki Hirayama, Tadahiro Ohmi, Tatsushi Yamamoto, Takamitsu Tadera
Estimating the term…
A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding means, a shower plate and a reaction gas supply passage. The microwave guiding means guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.
A plasma process device comprising:
Dependencies are inferred from the claim text.