Ionized metal plasma deposition process having enhanced via sidewall coverage
AssigneeKoninklijke Philips Electronics N.V.
InventorsJeffrey Klatt, Somchintana Norasetthekul
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Abstract
A method for depositing an adhesion layer in a contact region on a semiconductor substrate provides for sufficient coverage on the bottom and sidewalls of the contact region. In an example embodiment, a contact region having a bottom and sidewalls has a first coat of the adhesion layer deposited thereon at a thickness greater than the thickness on the sidewall. To compensate for the narrower adhesion layer thickness on the sidewalls, a second coat of the adhesion layer is deposited so that the second coat on the sidewalls is at a thickness greater than the second coat thickness on the bottom. The adhesion layer is titanium nitride although other materials may be used as well.
Claims7
A method for sputtering an adhesion layer in a contact region on a semiconductor substrate, the contact region having a bottom and sidewalls, the method comprising:
- sputtering a first coat of the adhesion layer in the contact region so that the adhesion layer material travels in a direction toward to the bottom of the contact region, wherein the sputtering of the first coat of the adhesion layer is done with IMP sputtering, having directional control to send adhesion layer toward the bottom of the contact region;
- and
- sputtering a second coat of the adhesion layer in the contact region so that the adhesion layer material travels in a direction toward the sidewalls, wherein the sputtering of the second coat of the adhesion layer is without directional control;
- and
- wherein the adhesion layer includes materials selected from the group of:
- Ti, Ti:W, TiN, WSix, Ti/TiN.
A method of sputtering a titanium nitride adhesion layer, in an Ar/N2 environment maintained to yield stoichiometric titanium nitride (TiN), in a contact region on a semiconductor substrate, the contact region having a bottom and sidewalls, the method comprising:
- sputtering from a target a first coat of the TiN adhesion layer in the contact region so that the adhesion layer material travels in a direction toward to the bottom of the contact region;
- and
- C sputtering from the target a second coat of the TiN adhesion layer in the contact region so that the TiN adhesion layer material travels in a direction toward the sidewalls;
- wherein, sputtering of the first coat of TiN further comprises, applying a first predetermined AC bias power on the semiconductor substrate and exposing the substrate to a first predetermined RF field power;
- and
- wherein sputtering of the second coat of the TiN layer filer comprises, applying a second predetermined AC bias power on the semiconductor substrate and exposing the substrate to a second predetermined RF field power.
Dependencies are inferred from the claim text.