Method of controlling outdiffusion in a doped three-dimensional film

A method of forming a conductive element of a circuit device, comprising:

• providing a first layer of said conductive element of said circuit device;
• providing a second layer on said first layer, wherein said second layer defines a first, substantially horizontal portion, and a second, substantially vertical portion;
• creating a dopant gradient by angled implantation between said first and second portions of said second layer;
• and
• reducing said dopant gradient between said first and second portions of said second layer by driving dopant through said vertical portion to said horizontal portion.

A method of forming an electrode, comprising:

• providing a first electrode layer at a transistor contact area;
• providing a second electrode layer over said first electrode layer, wherein said second electrode layer comprises a first horizontal lower portion adjacent said transistor contact area and a second horizontal upper portion remote from said transistor contact area and connected to said first portion by a vertical portion;
• implanting a dopant to said second portion of said second electrode layer by angled implantation to form a dopant gradient as measured from said second portion to said first portion and as measured through said second layer;
• and
• causing said dopant to move to said first portion from said second portion of said second electrode layer.

A method of forming a capacitor plate in a DRAM, comprising:

• providing a first capacitor plate layer comprising a first lower horizontal region contacting a transistor active area;
• providing an initially undoped second capacitor plate layer over said first capacitor plate layer, said second capacitor plate layer comprising a second lower horizontal region contacting said first region;
• placing a dopant in said second capacitor plate layer by angled implantation to form a dopant density profile within said second capacitor plate layer defining a decrease in dopant density along said second layer toward said second region and as measured through said second capacitor plate;
• and
• altering said dopant density profile within said second capacitor plate layer by shifting dopant along said second layer toward said second region.

A method of processing semiconductor layers, comprising:

• providing a first semiconductor layer having a first dopant density;
• providing a second semiconductor layer on said first semiconductor layer, wherein said second semiconductor layer has an initial constant dopant density less than said first dopant density and wherein said second layer has an upper horizontal portion and a lower horizontal portion interconnected by a vertical portion;
• generating a dopant density using angled implantation within said second semiconductor layer varying from said upper portion to said lower portion and varying through said layer, and wherein said dopant density at said lower portion of said second semiconductor layer is less than said first dopant density;
• and
• generating a final dopant density within said second semiconductor layer by shifting dopant along said second semiconductor layer towards lower portion.