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US 6,387,815 B2Granted
Method of manufacturing semiconductor substrate
AssigneeCanon Kabushiki Kaisha
InventorMasaru Sakamoto
Life of this patent
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Abstract
A method of manufacturing a semiconductor substrate includes the steps of laminating a first substrate having a single-crystal semiconductor region with a second substrate having an insulator region, and selectively removing the portion of the first substrate of the laminated substrates where lamination strength is weak.
Claims2
A method of manufacturing a semiconductor substrate, comprising the steps of:
- forming a laminated substrate by bonding a substrate having a single crystal silicon region and an insulating film formed thereon with a silicon substrate through said insulating film, said laminated substrate having non-contact portions where said insulating film does not contact said silicon substrate at an outer peripheral portion;
- and
- removing an outer peripheral portion of said single crystal silicon region, so as to expose an outer peripheral portion of said insulating film, and entirely removing said exposed outer peripheral portion of said insulating film, so as to expose an upper surface of an outer peripheral portion of said silicon substrate;
- whereby said non-contact portions at said outer peripheral portion of said laminated substrate disappear.
1 more element
Dependencies are inferred from the claim text.