Method of forming a titanium comprising layer and method of forming a conductive silicide contact

Abstract

The invention includes methods of forming titanium comprising layers, and methods of forming conductive silicide contacts. In one implementation, a method of forming a titanium comprising layer includes chemical vapor depositing a layer a majority of which comprises elemental titanium, titanium silicide or a mixture thereof over a substrate using a precursor gas chemistry comprising titanium and chlorine. The layer comprises chlorine from the precursor gas chemistry. The layer is exposed to a hydrogen containing plasma effective to drive chlorine from the layer. In one implementation, a method of forming a conductive silicide contact includes forming an insulating material over a silicon comprising substrate. An opening is formed into the insulating material over a node location on the silicon comprising substrate to which electrical connection is desired. A layer is chemical vapor deposited over the substrate using a precursor gas chemistry comprising titanium and chlorine. The layer comprises chlorine from the precursor gas chemistry. The depositing forms a majority of the layer over the node location as titanium silicide, and a majority of the layer over the insulating material as elemental titanium. At least the majority titanium silicide portion of the layer is exposed to a hydrogen containing plasma effective to drive chlorine therefrom.

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