Slurry for chemical mechanical polishing of copper
AssigneeAdvanced Micro Devices, Inc.
InventorsKai Yang, Steven Avanzino, Christy Mei-Chu Woo
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Abstract
Copper metalization is planarized by CMP employing a slurry which avoids scratching the copper surface and is highly selective to the underlying barrier layer. Embodiments include CMP a copper filled damascene opening using a slurry comprising about 0.2 to about 0.7 wt. % Al2O3 and about 0.2 to about 2 wt. % oxalic acid to achieve a RMS no greater than about 10 Å.
Claims11
A slurry for chemical mechanical polishing (CMP) copper (Cu) or a Cu alloy having higher selectivity to an underlying barrier layer, the slurry containing alumina (Al2O3) and oxalic acid.
A method of manufacturing a semiconductor device, the method comprising:
- chemical mechanical polishing (CMP) copper (Cu) or a Cu alloy with a slurry containing:
- about 0.2 to about 0.7 wt. % alumina (Al2O3);
- and
- about 0.3 to about 1 wt. % oxalic acid.
A method of preparing a slurry for chemical mechanical polishing copper (Cu) or a Cu alloy having high selectivity to an underlying barrier layer, the method comprising sequentially:
- mixing alumina (Al2O3) and oxalic acid;
- adding a corrosion inhibitor;
- mixing;
- adding H2O2 and water;
- mixing;
- adding water;
- and
- mixing.
Dependencies are inferred from the claim text.