Semiconductor device
AssigneeMatsushita Electronics Corporation
InventorsToshitaka Uchikoba, Masahiko Sakagami, Akihiro Yamamoto
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Abstract
In a semiconductor substrate of a first conductivity type, first and second high-concentration layers of a second conductivity type are formed in spaced relation to each other. A reference voltage is applied to the second high-concentration layer. A conductive layer provides an electrical connection between the first high-concentration layer and an input pad for inputting an input signal to an input circuit or input/output circuit. A first low-concentration layer of the second conductivity type is formed in the region of the semiconductor substrate immediately underlying the first high-concentration layer.
Claims12
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a first high-concentration layer of a second conductivity type formed in said semiconductor substrate;
- a second high-concentration layer of the second conductivity type formed in said semiconductor substrate in spaced relation to said first high-concentration layer, a reference voltage being applied to said second high-concentration layer;
- a conductive layer for providing an electrical connection between said first high-concentration layer and an input pad for inputting an input signal to an input circuit or to an input/output circuit;
- a first low-concentration layer of the second conductivity type formed in a region of said semiconductor substrate immediately underlying said first high-concentration layer;
- and
- a high-resistance conductive layer formed between said input pad and said first high-concentration layer to be connected in series with said conductive layer, said high-resistance conductive layer having a resistance value higher than that of said conductive layer.
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a first high-concentration layer of a second conductivity type formed in said semiconductor substrate;
- a second high-concentration layer of the second conductivity type formed in said semiconductor substrate in spaced relation to said first high-concentration layer, a reference voltage being applied to said second high-concentration layer;
- a conductive layer for providing an electrical connection between said first high-concentration layer and an input pad for inputting an input signal to an input circuit or to an input/output circuit;
- and
- a first low-concentration layer of the second conductivity type formed in a region of said semiconductor substrate immediately underlying said first high-concentration layer,
- wherein said first high-concentration layer has a non-opposing region extending outwardly from a region thereof in opposing relation to said second high-concentration layer, said non-opposing region being electrically connected to said conductive layer.
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a first high-concentration layer of a second conductivity type formed in said semiconductor substrate;
- a second high-concentration layer of the second conductivity type formed in said semiconductor substrate in spaced relation to said first high-concentration layer, a reference voltage being applied to said second high-concentration layer;
- a conductive layer for providing an electrical connection between said first high-concentration layer and an input pad for inputting an input signal to an input circuit or to an input/output circuit;
- a first low-concentration layer of the second conductivity type formed in a region of said semiconductor substrate immediately underlying said first high-concentration layer;
- and
- a fourth high-concentration layer of the first conductivity type formed in a region of said semiconductor substrate surrounding said first and second high-concentration layers, a reference voltage being applied to said fourth high-concentration layer.
Dependencies are inferred from the claim text.