Method for forming a capacitor in a semiconductor device

Abstract

In a method for forming a capacitor in the semiconductor memory, a lower electrode is formed on an interlayer insulator film, and a high dielectric constant insulating film is formed to cover the whole surface including the lower electrode. Furthermore, an upper electrode layer is formed to cover the high dielectric constant insulating film. Thereafter, a plasma treatment is carried out to expose a surface of the upper electrode layer to plasma so that a suctorial layer is uniformly formed at the whole surface of the upper electrode layer, and then, a NSG film is grown on the whole surface of the upper electrode layer by a CVD process using TEOS as a starting material. Thus, an interlayer insulator film of the NSG film can be formed to have a uniform film thickness over the whole surface of the upper electrode.

Dependencies are inferred from the claim text.