US 6,297,555 B1 · Method to obtain a low resistivity and conformity chemical vapor deposition titanium film

Abstract

A method of forming titanium nitride barrier layers that are highly conformal, have high step coverage and low resistivity through a two stage deposition process is described. Low temperature deposition of titanium nitride barrier layer provides material of high conformity and good step coverage but of high resistivity. High temperature deposition of titanium nitride barrier layer yields material of low resistivity. Thus, a titanium nitride barrier layer deposited in separate steps at low temperature and high temperature by the method of the present invention is particularly suited for use in modern devices of increasing density that are characterized by narrow and deep contact holes.

Claims34

Dependent claims

A semiconductor device including a titanium nitride barrier layer comprising:

a first titanium nitride sublayer having a first resistivity and a second titanium nitride sublayer having a second resistivity, wherein the titanium nitride barrier layer is formed as follows:
depositing the first titanium nitride sublayer of a first resistivity on a partially fabricated electronic device at a first temperature;
and
depositing the second titanium nitride sublayer of a second resistivity on said first titanium nitride sublayer at a second temperature wherein said second temperature is greater than said first temperature and said second resistivity is lower than said first resistivity.

1 more element

Dependencies are inferred from the claim text.

Method to obtain a low resistivity and conformity chemical vapor deposition titanium film

Life of this patent

Method to obtain a low resistivity and conformity chemical vapor deposition titanium film

Life of this patent

Abstract

Claims34