Diode structure compatible with silicide processes for ESD protection
AssigneeWinbond Electronics Corp.
InventorTa-Lee Yu
Life of this patent
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Abstract
A diode structure compatible with silicide processes for electrostatic discharge protection is disclosed. The diode structure comprises a semiconductor layer of a first conductivity type, a diffusion region of a second conductivity type formed in the semiconductor layer, and a doped region of the second conductivity type formed in the semiconductor layer around the diffusion region. The doped region has a doping concentration less than that of the diffusion region to provide a ballastic resistance under a high current stressing condition.
Claims19
A diode structure for electrostatic discharge protection, comprising:
- a semiconductor layer of a first conductivity type, directly coupled to a first pad;
- a diffusion region of a second conductivity type formed in said semiconductor layer, directly coupled to a second pad;
- a silicide layer overlying said diffusion region;
- and
- a doped region of the second conductivity type formed in said semiconductor layer around the edge of said diffusion region, wherein said doped region has a doping concentration less than that of said diffusion region to provide a ballastic resistance between the first pad and the second pad under a high current stressing condition.
A diode structure for electrostatic discharge protection, comprising:
- a semiconductor layer of a first conductivity type;
- a diffusion region of a second conductivity type formed in said semiconductor layer and directly coupled to a first pad;
- a silicide layer overlying said diffusion region;
- a gate ring formed on said semiconductor layer around said diffusion region and directly coupled to a second pad;
- and
- a doped region of the second conductivity type formed in said semiconductor layer around the edge of said diffusion region, wherein said doped region has a doping concentration less than that of said diffusion region to provide a ballastic resistance between the first pad and the second pad under a high current stressing condition.
A diode structure for electrostatic discharge protection, comprising:
- a semiconductor layer of a first conductivity type;
- a diffusion region of a second conductivity type formed in said semiconductor layer;
- a silicide layer overlying said diffusion region;
- and
- a well region of the second conductivity type formed in said semiconductor layer around the edge of said diffusion region, wherein said well region has a doping concentration less than that of said diffusion region to provide a ballastic resistance under a high current stressing condition.
Dependencies are inferred from the claim text.