Method of manufacturing barrier metal film of semiconductor device and method of manufacturing metal interconnection film of semiconductor device using the same

A method of manufacturing a metal interconnection film of a semiconductor device, comprising:

• forming a contact hole which exposes an impurity region formed on a semiconductor substrate;
• forming a barrier metal film in the contact hole;
• annealing the barrier metal film;
• in-situ oxygen-annealing immediately after said annealing, said in-situ oxygen annealing including providing oxygen for a predetermined time, the predetermined time being short enough that a contact resistance of the barrier metal film stays below an allowable maximum and long enough to form an oxide film as a diffusion barrier film on a surface of the barrier metal film;
• nitrogen annealing, after said in-situ oxygen annealing, the oxygen-annealed barrier metal film under an oxygen free atmosphere;
• and
• forming an interconnection film on the oxygen-annealed barrier metal film.