Photo mask of semiconductor device and method for manufacturing the same

A method for manufacturing a photo mask of a semiconductor device, comprising:

• providing a light transmitting substrate which is transparent to light produced by at least one of an ArF light source and a KrF light source;
• and
• forming a transmission preventing layer of a molybdenum alloy layer on the light transmitting substrate, wherein the molybdenum alloy layer comprises a solid solution of a metal atom and molybdenum, and wherein the transmission preventing layer blocks transmission of the light produced by at least one of the ArF light source and the KrF light source.

A photo mask of a semiconductor device, comprising:

• a light transmitting substrate;
• and
• a transmission preventing layer, formed of a molybdenum alloy, on the light transmitting substrate, wherein the molybdenum alloy is a molybdenum chrome alloy comprising a substitutional solid solution of chrome in molybdenum.

A method for manufacturing a photo mask of a semiconductor device, comprising:

• providing a light transmitting substrate;
• and
• forming a transmission preventing layer of a molybdenum alloy layer on the light transmitting substrate, wherein the molybdenum alloy layer is formed by sputtering a target of a molybdenum chrome alloy which is a substitutional solid solution of chrome and molybdenum.