Regeneration of chemical mechanical polishing pads in-situ

A method for regenerating in-situ a chemical-mechanical polishing pad (CMP) comprising the steps:

• providing a polishing surface;
• forming said polishing pad by dispensing liquid material on said polishing surface and solidifying said liquid material;
• distributing slurry material on said polishing pad;
• polishing the surface of a semiconductor wafer with said polishing pad in combination with said slurry material;
• and
• remolding in-situ said polishing pad by liquifying said polishing pad, partially draining some of said liquified material, adding fresh liquid material to the bottom of said polishing pad and resolidifying the combination of said remaining liquified material and said added fresh liquid material.

A method for regenerating in-situ a chemical-mechanical polishing pad (CMP) comprising the steps:

• providing a polishing surface;
• forming said polishing pad by dispensing liquid material on said polishing surface and solidifying said liquid material;
• distributing slurry material on said polishing pad,
• polishing the surface of a semiconductor wafer with a combination of said polishing pad and said slurry;
• and
• remolding in-situ said polishing pad by liquifying said polishing pad, partially draining some of said liquified polishing pad, adding fresh liquid and slurry material said liquified polishing pad and resolidifying the combination of a remaining of said liquified polishing pad, said added fresh liquid and said slurry material.