Surface treatment of semiconductor substrates

A process for treatment of a semiconductor substrate having a surface to which undesired particles adhere comprising:

• moving a foam and the semiconductor substrate relative to each other, thereby causing the foam to form a continuous film on said surface of the semiconductor substrate, and to pass over the surface of the semiconductor substrate in moving contact therewith;
• and
• carrying away undesired particles from said surface of the semiconductor substrate with the foam,
• in which the foam and semiconductor substrate are caused to move relative to each other by the introduction of foam into a treatment vessel in which the semiconductor substrate is situated, and in which the introduction of foam into the treatment vessel is carried out by first introducing into the treatment vessel a foam consisting essentially of a surface tension-reducing agent and deionized water, and thereafter introducing into the treatment vessel a foam comprising a surface tension-reducing agent, deionized water and at least one reactant for chemical treatment of the semiconductor substrate whereby a chemical reaction takes place between the semiconductor substrate and the reactant.

A process for treatment of a semiconductor substrate having a surface to which undesired particles adhere comprising:

• moving a foam and the semiconductor substrate relative to each other, thereby causing the foam to form a continuous film on said surface of the substrate, and to pass over the surface of the semiconductor substrate in moving contact therewith;
• and
• carrying away undesired particles from said surface of the semiconductor substrate with the foam,
• in which the foam and semiconductor substrate are caused to move relative to each other by the introduction of foam into a treatment vessel in which the semiconductor substrate is situated, in which the introduction of foam into the treatment vessel is carried out by alternately introducing a foam consisting essentially of a surface tension-reducing agent and deionized water, and a foam comprising a surface tension-reducing agent, deionized water and at least one reactant for chemical treatment of the semiconductor substrate.

A process for treatment of a semiconductor substrate having a surface to which undesired particles adhere comprising:

• generating a foam consisting of gas bubbles and a liquid component;
• causing said foam to form a continuous film on said surface of the semiconductor substrate;
• and,
• by moving the foam and the semiconductor substrate relative to each other while the foam is in contact with said surface, causing the foam to carry said undesired particles away from said surface of the semiconductor substrate.