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AssigneesInfineon Technologies North America Corp., International Business Machines Corporation
InventorsStephan Kudelka, David Rath
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A system is provided to prepare deionized water having a 100% saturated concentration of a gas, e.g., nitrogen, at a hot temperature, e.g., 50-85° C., and an attendant pressure, e.g., atmospheric pressure, to clean a semiconductor wafer, e.g., of silicon. The gas concentration of a first deionized water portion having a predetermined concentration of the gas at a cold temperature, e.g., 20-30° C., is adjusted in a gassifier chamber having a pressure pump and a pressure sensor, to provide a predetermined under-saturated concentration of the gas at the cold temperature. The temperature of the adjusted gas concentration first water portion is then adjusted by mixing therewith a second deionized water portion having a predetermined concentration of the gas at a predetermined very hot temperature, e.g., 80° C., in a predetermined ratio in a mixer having a temperature sensor. The flows of the first and second water portions are controlled by first and second flow controllers, to form a hot bath at the hot temperature having such saturated gas concentration to clean the wafer, e.g., in a cleaning tank under megasonic vibrations. A controller is connected to the pump, pressure sensor, temperature sensor and first and second flow controllers to control the chamber pressure and the operation of the flow controllers.
A method for preparing deionized water containing a substantially 100% saturated concentration of a non-reactive cleaning enhancing gas dissolved therein at a selective elevated cleaning temperature and a selective attendant cleaning pressure for cleaning a semiconductor wafer, the method comprising the steps of:
A method for preparing deionized water containing a substantially 100% saturated concentration of a non-reactive cleaning enhancing gas dissolved therein at a selective elevated cleaning temperature of about 50-85° C. and a selective attendant cleaning pressure of about atmospheric pressure for cleaning a semiconductor wafer, the method comprising the steps of:
A method for preparing deionized water containing a substantially 100% saturated concentration of a non-reactive cleaning enhancing gas dissolved therein at a selective elevated cleaning temperature and a selective attendant cleaning pressure for cleaning a semiconductor wafer, the method comprising the steps of:
Dependencies are inferred from the claim text.