Non-volatile memory cell with field-enhancing floating gate and method for forming the same

A non-volatile memory device having a substrate and a first dielectric layer disposed over the substrate, comprising:

• a floating gate disposed over the first dielectric layer, said floating gate having a top portion, a bottom portion, at least five sides and a protrusion;
• a second dielectric layer disposed over said floating gate;
• and
• a control gate disposed over said second dielectric layer;
• wherein said protrusion of said floating gate creates an enhanced local field to induce Fowler-Nordheim tunneling of electrons from said floating gate to said control gate when a high voltage is applied to said control gate.

A non-volatile memory device, comprising:

• a semiconductor substrate;
• first and second spaced-apart regions in said substrate and a channel region therebetween;
• a first dielectric layer disposed over said substrate;
• a floating gate disposed over said first dielectric layer and extending over a portion of said channel region and over a portion of said second spaced-apart region, said floating gate having a top portion, a bottom portion, at least five sides, and a protrusion, wherein said bottom portion is contiguous with said first dielectric layer;
• a second dielectric layer having first and second connected sections, said first dielectric section being contiguous with at least two of said at least five sides of said floating gate and said second dielectric section disposed over and contiguous with said top portion of said floating gate;
• and
• a control gate disposed over said first dielectric layer and said second dielectric layer, and extending over a portion of said first spaced-apart region;
• wherein a first voltage is applied to said first spaced-apart region and said second spaced-apart region, and a second voltage is applied to said control gate to create an enhanced electric field to induce Fowler-Nordheim tunneling of electrons from said floating gate to said control gate.