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US 6,294,444 B1Granted
Method for manufacturing silicon carbide semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorKatsunori Ueno
Life of this patent
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Abstract
In a method for manufacturing a silicon carbide semiconductor device, preliminary heat treatment is conducted after implanting impurity ions into a silicon carbide substrate, such that the silicon carbide substrate is heated at a temperature in a range of, for example, 800 to 1200° C., in a hydrogen atmosphere or a mixed gas ambient comprising hydrogen and inert gas. After the preliminary heat treatment, the silicon carbide substrate may be annealed at a high temperature.
Claims18
A method for manufacturing a silicon carbide semiconductor device, comprising the steps of:
- conducting preliminary heat treatment after implanting impurity ions into a silicon carbide substrate, said preliminary heat treatment comprising a step of heating the silicon carbide substrate in an atmosphere comprising hydrogen or a mixture of hydrogen and an inert gas at a temperature of at least 800° C.;
- and
- annealing the silicon carbide substrate at a temperature greater than the temperature of said preliminary heat treatment.
Dependencies are inferred from the claim text.