Method for forming thin films
AssigneeNEC Corporation
InventorMasashi Ichikawa
Life of this patent
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Abstract
A reactor furnace, in which a plurality of silicon nitride film forming processes have been performed to produce a desired thin film, is changed in temperature from its film-forming temperature to another one lower than the film-forming temperature before an unnecessary silicon nitride film cracks of itself in the reactor furnace, so that the unnecessary silicon nitride film is intentionally subjected to stress and cracked, whereby the unnecessary thin film is relieved from stress. After that, the thus cracked film is covered with another silicon nitride film serving as a repair film, to prevent the unnecessary thin film from producing contaminant particles in forming the desired thin film.
Claims13
A method for forming a desired thin film on a substrate having been loaded into a reactor furnace of a chemical vapor deposition unit into which a reactant gas is introduced, comprising the steps of:
- forming said desired thin film on said substrate;
- relieving at least an unnecessary thin film from stress, said unnecessary thin film being formed on a wall of said reactor furnace;
- and
- covering said unnecessary thin film thus relieved from the stress with a repair film.
A method for forming a desired thin film on a substrate having been loaded into a reactor furnace of a chemical vapor deposition unit into which a reactant gas is introduced, comprising the steps of:
- forming said desired thin film on said substrate;
- relieving at least an unnecessary thin film from stress by lowering in temperature the interior of said reactor furnace from a film-forming temperature of said desired thin film to another temperature lower than said film-forming temperature, wherein said unnecessary thin film is formed on a wall of said reactor furnace when said desired thin film is formed;
- and
- forming a repair film to cover said unnecessary thin film therewith at said another temperature lower than said film-forming temperature of the desired thin film.
Dependencies are inferred from the claim text.