Method and device for high-temperature, high-pressure treatment of semiconductor wafer
AssigneeKabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
InventorsTakao Fujikawa, Yutaka Narukawa, Tsuneharu Masuda, Makoto Kadoguchi
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Abstract
In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafers are vertically stacked in the treatment chamber, and the heater is arranged within the treatment chamber to perform the treatment while supplying a heating power by DC to the heater, whereby generation of particles from the heater is suppressed.
Claims7
A high-temperature, high-pressure treatment method for semiconductor wafers, comprising the steps of:
- vertically stacking wafers in a treatment chamber within a pressure vessel;
- forcing and pressurizing an inert gas such as argon into the treatment chamber, and raising the temperature in the treatment chamber by using an electric resistance heater located within the treatment chamber to perform the treatment while supplying DC heating power to the heater.
A high-temperature, high-pressure treatment device for semiconductor wafers, comprising:
- a charging device adapted for charging a wafer-like semiconductor material in a treatment chamber within a pressure vessel,
- an inert gas supplying device adapted for forcing and pressurizing an inert gas such as argon into the treatment chamber
- a heater adapted for raising the temperature in the treatment chamber, the heater comprising an electric resistance heater located within the treatment chamber;
- and
- a power device adopted for supplying DC heating power to the heater.
Dependencies are inferred from the claim text.