Method for forming titanium polycide gate

Abstract

A method for forming a titanium polycide gate, comprising the steps of: forming a gate oxide and a doped polysilicon layer over the semiconductor substrate, in turn; implanting impurity ions into the doped polysilicon layer to form an amorphous phase silicon layer in the surface of the polysilicon layer; forming an amorphous phase titanium silicide layer over the amorphous phase silicon layer; carrying out heat-treatment to transform the amorphous phase titanium silicide layer into a crystalline phase titanium silicide layer and to transform the amorphous phase silicon layer into the crystalline silicon layer; and patterning the crystalline phase titanium silicide layer, the polysilicon layer including the crystalline phase silicon layer and the gate oxide to form the titanium polycide gate.

Dependencies are inferred from the claim text.