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US 6,281,074 B1Granted
Method of manufacturing oxide layer
AssigneeUnited Microelectronics Corp.
InventorKow-Ming Chang
Life of this patent
Estimating the term…
Abstract
A method is described for manufacturing an oxide layer. A substrate is provided. An amorphous silicon layer is formed on the substrate. The amorphous silicon layer is recrystallized to form a polysilicon layer. The polysilicon layer is oxidized to form an oxide layer.
Claims23
A method of manufacturing an oxide layer, comprising the steps of:
- providing a substrate with a first conductive layer having an exposed rough surface;
- forming an amorphous silicon layer over the substrate and the rough surface;
- recrystallizing the amorphous silicon layer to form a polysilicon layer;
- oxidizing the polysilicon layer into an oxide layer with an even surface;
- and
- forming a second conductive layer over the oxide layer, wherein the oxide layer remains without being removed.
3 more elements
A method of manufacturing an oxide layer on a floating gate of an electrically erasable and programmable read-only memory, comprising the sequential steps of:
- forming an amorphous silicon layer on the floating gate that has a rough surface;
- recrystallizing the amorphous silicon layer to form a polysilicon layer,
- oxidizing the polysilicon layer into an oxide layer;
- and
- forming a controlling gate on the oxide layer.
2 more elements
A method of manufacturing an oxide layer on a bottom electrode of a capacitor, comprising the steps of:
- forming an amorphous silicon layer over the bottom electrode that has a rough surface;
- recrystallizing the amorphous silicon layer to form a polysilicon layer;
- oxidizing the polysilicon layer to form an oxide layer;
- and
- forming an upper electrode on the oxide layer.
2 more elements
Dependencies are inferred from the claim text.