Method of protecting gate oxide

A method of protecting gate oxide, comprising:

• providing a substrate having a gate thereon;
• forming a dielectric layer on the substrate and the gate;
• and
• forming a protection layer on the dielectric layer aligned over both sides of the gate, wherein the protection layer comprises a conductive layer.

A method of protecting gate oxide, comprising:

• providing a substrate having a gate thereon;
• forming a dielectric layer on the substrate and the gate;
• and
• forming a protection layer on the dielectric layer aligned over both sides of the gate, wherein the protection layer comprises a tungsten layer.

A method of protecting gate oxide, comprising:

• providing a substrate;
• forming a gate oxide layer on the substrate;
• forming a gate electrode on the gate oxide layer;
• forming a dielectric layer on the gate electrode and the substrate;
• forming a first protection layer on the dielectric layer;
• patterning the first protection layer, the patterned first protection layer being aligned over both sides of the gate electrode;
• forming an inter-metal dielectric layer on the patterned first protection layer and the dielectric layer;
• and
• forming a second protection layer on the inter-metal dielectric layer being aligned over the first protection layer.

A fabrication method for a multi-level interconnect, comprising:

• forming a gate on a substrate;
• forming a first dielectric layer on the gate and the substrate;
• forming a first protection layer on the dielectric layer, wherein the first protection layer aligned over both sides of the gate;
• forming a second dielectric layer on the first protection layer and on the first dielectric layer;
• f forming a metal layer on the second dielectric layer;
• forming a third dielectric layer on the metal layer;
• and
• forming a second protection layer on the third dielectric layer, wherein the second protection layer aligned over the first protection layer.