Method for forming a via
AssigneeUnited Microelectronics Corp.
InventorChia-Chieh Yu
Life of this patent
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Abstract
An improved method of forming a via on a semiconductor substrate forms a conductive line thereon and then forms an inter-metal dielectric layer over the conductive line. A patterned photoresist layer is formed on the inter-metal dielectric layer. A portion of the inter-metal dielectric layer is removed to expose the conductive line using the photoresist layer as a mask to form a via hole, wherein the via hole is subsequently used to form a via. A high density plasma process is performed to remove the photoresist layer. The photoresist layer remaining on the substrate is removed with a solvent.
Claims12
A method of forming a via on a semiconductor substrate, wherein a conductive line is formed on the substrate and an inter-metal dielectric layer is formed over the conductive line, the method comprising:
- forming a patterned photoresist layer on the inter-metal dielectric layer;
- removing a portion of the inter-metal dielectric layer to expose the conductive line using the photoresist layer as a mask to form a via hole wherein the via hole is subsequently used to form a via;
- performing a high density oxygen plasma process to remove the photoresist layer and simultaneously form a passivation layer;
- and
- performing a cleaning step with a solvent to remove the photoresist layer remaining on the substrate.
A method of removing a photoresist layer over a substrate, comprising the step of:
- performing a high density oxygen plasma process to remove the photoresist layer and simultaneously form a passivation layer;
- and
- performing a cleaning step with an alkaline solvent which containing amine group to remove the photoresist layer remaining on the substrate.
A method of forming a via over a substrate, comprising:
- forming a conductive line over the substrate;
- forming a conformal barrier oxide layer on the conductive line;
- forming a flowable oxide layer on the barrier oxide layer;
- forming an isolation layer on the flowable oxide layer;
- forming a cap oxide layer on the isolation layer;
- forming a patterned photoresist layer on the cap oxide layer;
- etching the cap oxide layer, the isolation layer, the flowable oxide layer, and the barrier oxide layer until the conductive line is exposed using the photoresist layer as a mask to form a via hole, wherein the via hole is subsequently used to form a via;
- performing a high density oxygen plasma process to remove the photoresist layer and simultaneously form a passivation layer;
- and
- performing a cleaning step with a solvent to remove the photoresist layer remaining on the substrate.
Dependencies are inferred from the claim text.