Method of detecting defects in a wiring process
AssigneeNEC Corporation
InventorHiroaki Kikuchi
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AssigneeNEC Corporation
InventorHiroaki Kikuchi
Estimating the term…
A circuit, a semiconductor wafer including the circuit and a method for detecting defects of wiring used for detecting a malfunction in a wiring fabrication process during semiconductor device manufacturing. The circuit comprises an insulating film formed on a semiconductor substrate, a first wiring which is formed on the insulating film formed on the semiconductor substrate and is in an electrically floating condition, and a second wiring which is formed on the insulating film formed on the semiconductor substrate and is disposed adjacent to the first wiring and is in an electrically floating condition, wherein the capacitance between the second wiring and the semiconductor substrate is larger than the capacitance between the first wiring and the semiconductor substrate. Portions of the first and second wiring are scanned by an electron beam on the surfaces thereof, and secondary electrons emitted from the first wiring and second wiring are detected.
A method for detecting defects of wiring to detect a malfunction of a fabrication process of a wiring in a semiconductor device manufacturing method, the method comprising:
Dependencies are inferred from the claim text.