US 6,191,432 B1 · Semiconductor device and memory device

Abstract

A semiconductor device includes a superlattice having a first semiconductor layer having a first band-gap, a second semiconductor layer having a band-gap narrower than the first band-gap, the superlattice having a band structure with an energy level of a conduction band of the second semiconductor layer being lower than an energy level of a conduction band of the first semiconductor layer and an energy level of a valence band of the second semiconductor layer being lower than an energy level of a valence band of the first semiconductor layer, or a band structure with an energy level of a conduction band of the second semiconductor layer being higher than an energy level of a conduction band of the first semiconductor layer and an energy level of a valence band of the second semiconductor layer being lower than an energy level of a valence band of the first semiconductor layer, an exposed face formed on a plane different from a plane orientation on which the superlattice is formed, an end face of the superlattice being exposed to the exposed face, and a channel being formed on the exposed face.

Claims12

Dependent claims

A semiconductor device comprising:

a superlattice comprising a first semiconductor layer having a first band-gap, a second semiconductor layer having a band-gap narrower than said first band-gap, said superlattice having a band structure with an energy level of a conduction band of said second semiconductor layer being lower than an energy level of a conduction band of said first semiconductor layer and an energy level of a valence band of said second semiconductor layer being lower than an energy level of a valence band of said first semiconductor layer, or a band structure with an energy level of a conduction band of said second semiconductor layer being higher than an energy level of a conduction band of said first semiconductor layer and an energy level of a valence band of said second semiconductor layer being higher than an energy level of a valence band of said first semiconductor layer;
an exposed face formed on a plane different from a plane orientation on which said superlattice is formed, an end face of said superlattice being exposed to said exposed face;
and
a channel selectively formed on said exposed face.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device and memory device

Life of this patent

Semiconductor device and memory device

Life of this patent

Abstract

Claims12