Method of fabricating capacitor for semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsSoo Jin Seo, Byung Jae Choi
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Abstract
A method for fabricating a capacitor for a semiconductor device is disclosed. The method includes the steps of forming an insulation film having a contact hole on a substrate, forming a hemispherical grain (HSG) film on an inner surface of the contact hole, forming a lower electrode on a surface of the HSG film, removing the insulation film, forming a dimple on a surface of the lower electrode by removing the HSG film, forming a dielectric film on a surface of the lower electrode, and forming an upper electrode on a surface of the dielectric film, for thereby enhancing a reproducibility of the process and a reliability of a semiconductor device by preventing a lower electrode of a capacitor and a HSG film from being damaged.
Claims20
A method for fabricating a capacitor for a semiconductor device, comprising;
- forming an insulation film having a contact hole on a substrate;
- forming a hemispherical grain (HSG) film on an inner surface of the contact hole;
- forming a lower electrode on a surface of the HSG film formed on the inner surface of the contact hole, the lower electrode being formed such that it fills the contact hole to create a substantially cylindrical shape;
- removing the insulation film;
- forming a dimpled surface of the lower electrode by removing the HSG film positioned on a circumferential surface of the substantially cylindrical lower electrode;
- forming a dielectric film on a surface of the lower electrode;
- and
- forming an upper electrode on a surface of the dielectric film.
A method for fabricating a capacitor for a semiconductor device, comprising:
- forming a first insulation film having a first contact hole on a substrate;
- forming a lower portion of a first electrode of a capacitor by depositing conductive material in the first contact hole;
- forming a second insulation film on the first insulation film and the lower portion of the first electrode;
- forming a second contact hole by removing the second insulation film formed in a portion matching with the lower portion of the first electrode;
- forming a hemispherical grain (HSG) film on an inner wall and a bottom portion of the second contact hole;
- forming an upper portion of the first electrode of the capacitor on the HSG film by filling the second contact hole with conductive material;
- removing the second insulation film;
- forming a dimpled outer circumferential surface of the upper portion of the first electrode by removing the HSG film;
- forming a dielectric film on an outer surface of the upper portion of the first electrode;
- and
- forming a second electrode on a surface of the dielectric film.
Dependencies are inferred from the claim text.