Semiconductor device and method for producing same

A method for producing a semiconductor device, said method comprising the steps of:

• forming a pair of MOS transistors on a semiconductor substrate on both sides of a field oxide film so that each of said transistors has a gate insulating film, a gate electrode and a pair of source/drain regions;
• forming an interlayer insulating film thereon;
• forming first and second openings in said interlayer insulating film so that said first opening is arranged above said field oxide film to allow both of said pair of facing source/drain regions of said pair of transistors to be exposed and said second opening allows an outer one of said source/drain regions of each of said pair of transistors to be exposed;
• embedding conductive materials in said first and second openings of said interlayer insulating film;
• performing the etch back of said conductive materials so that said conductive materials in said first and second openings are level with said interlayer insulating film;
• forming a second insulating film thereon;
• forming a wiring embedding groove in said second insulating film;
• and
• embedding a wiring material in said groove.

A method for producing a semiconductor device, said method comprising the steps of:

• forming a MOS transistor on a semiconductor substrate so that said MOS transistor has first and second diffusion layers serving as sources or drains and a gate electrode which is formed so as to be adjacent said first and second diffusion layers;
• forming an interlayer insulating film on said semiconductor substrate and said MOS transistor so as to have an elevation higher than that of said gate electrode;
• forming a first opening in said interlayer insulating film for exposing the surface of said first diffusion layer and the surface of said gate electrode, and simultaneously forming a second opening reaching said first diffusion layer;
• and
• forming electrode materials in said first and second openings.