Method for forming a barrier metallization layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChen-Hua D. Yu
Life of this patent
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Abstract
A method for forming a barrier metallization layer upon a semiconductor substrate. A semiconductor substrate is provided which has formed upon its surface a barrier metallization layer. The barrier metallization layer has formed in-situ upon its surface a silicon layer. The silicon layer has a thickness such that the contact resistance of the barrier metallization layer is not substantially increased. In a further embodiment, the barrier metallization layer and the silicon layer are sintered to form a metal silicide layer upon the surface of the barrier metallization layer.
Claims5
A method for forming a barrier metallization layer upon a semiconductor substrate comprising:
- providing a semiconductor substrate;
- forming upon the semiconductor substrate a barrier metallization layer;
- and
- forming in-situ upon the barrier metallization layer a silicon layer, the silicon layer being formed without exposing the barrier metallization layer to oxygen, the silicon layer having a thickness such that the contact resistance of the barrier metallization layer is not substantially increased;
- wherein the barrier metallization layer is formed at a thickness of about 100 to about 1000 angstroms.
A method for forming a barrier metallization layer upon a semiconductor substrate comprising:
- providing a semiconductor substrate;
- forming upon the semiconductor substrate a barrier metallization layer;
- and
- forming in-situ upon the barrier metallization layer a silicon layer, the silicon layer being formed without exposing the barrier metallization layer to oxygen, the silicon layer having a thickness such that the contact resistance of the barrier metallization layer is not substantially increased;
- wherein the silicon layer is formed from an amorphous silicon material;
- wherein the amorphous silicon material is formed upon the surface of the barrier metallization layer at a thickness of about 50 to about 500 angstroms.
A method for forming a barrier metallization layer upon a semiconductor substrate comprising:
- providing a semiconductor substrate;
- forming upon the semiconductor substrate a barrier metallization layer;
- and
- forming in-situ upon the barrier metallization layer a silicon layer, the silicon layer being formed without exposing the barrier metallization layer to oxygen, the silicon layer having a thickness such that the contact resistance of the barrier metallization layer is not substantially increased;
- sintering the silicon layer and the barrier metallization layer to form a silicide layer upon the surface of the barrier metallization layer;
- wherein the sintering of the silicon layer and the barrier metallization layer is undertaken at about 600 to about 900 degrees centigrade.
A method for forming a titanium barrier metallization layer upon a semiconductor substrate comprising:
- providing a semiconductor substrate;
- forming a titanium barrier metallization layer upon the semiconductor;
- and
- forming in-situ upon the titanium barrier metallization layer a silicon layer, the silicon layer being formed without exposing the titanium barrier metallization layer to oxygen, the silicon layer being of a thickness such that the contact resistance of the titanium barrier metallization layer is not substantially increased;
- wherein the titanium barrier metallization layer is formed upon the surface of the semiconductor substrate through a Physical Vapor Deposition (PVD) sputtering process to yield a titanium barrier metallization layer of thickness of about 100 to about 1000 angstroms.
A method for forming a titanium barrier metallization layer upon a semiconductor substrate comprising:
- providing a semiconductor substrate;
- forming a titanium barrier metallization layer upon the semiconductor;
- and
- forming in-situ upon the titanium barrier metallization layer a silicon layer, the silicon layer being formed without exposing the titanium barrier metallization layer to oxygen, the silicon layer being of a thickness such that the contact resistance of the titanium barrier metallization layer is not substantially increased;
- wherein the silicon layer is formed from an amorphous silicon material formed upon the surface of the barrier metallization layer at a thickness of about 50 to about 500 angstroms.
Dependencies are inferred from the claim text.