DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films
AssigneeMicron Technology, Inc.
InventorsScott J. Deboer, Klaus F. Schuegraf, Ronald A. Weimer, Randhir P. S. Thakur
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Abstract
An exemplary implementation of the present invention includes a capacitor for a dynamic random access memory cell having a first plate; a second plate; and a dielectric layer interposed between said first and second plates, with the dielectric layer being dominated by electrode-limited conduction, which includes tantalum pentoxide and silicon nitride, or a combination of the two. In a preferred implementation, one of the two capacitor plates is formed from a silicon-germanium layer, the second plate is formed from a metal and the dielectric layer is formed from tantalum pentoxide.
Claims19
A method for forming a capacitor for a dynamic random access memory cell comprising the steps of:
- forming a first capacitor electrode;
- forming a cell dielectric layer over said first capacitor electrode, said dielectric layer being dominated by electrode-limited conduction;
- and
- forming a second capacitor electrode over said cell dielectric layer;
- wherein, at least one of said electrodes is formed from silicon-germanium.
A method for forming a capacitor for a dynamic random access memory cell comprising the steps of:
- forming a first capacitor plate from a conductively-doped, silicon-germanium layer;
- forming a dielectric layer over said first plate, said dielectric layer being dominated by electrode-limited conduction;
- and
- forming a second capacitor plate over said dielectric layer, said second plate formed from a metal layer.
Dependencies are inferred from the claim text.