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US 6,149,779 AGranted
Low-k BSG gap fill process using HDP
AssigneeNovellus Systems, Inc.
InventorPatrick A. Van Cleemput
Life of this patent
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Abstract
A low dielectric constant gap-fill process using high density plasma (HDP) deposition is provided for depositing a boron-doped silicon oxide layer to eliminate the damaging effects of fluorine on underlying circuitry while still maintaining a low dielectric constant for an intermetal dielectric (IMD) layer.
Claims13
A process for filling gaps during integrated circuit production, comprising:
- providing a gas mixture consisting of silicon-containing, oxygen-containing, and boron-containing components;
- and
- depositing a film over said gaps by using said gas mixture for simultaneous chemical vapor deposition (CVD) and sputter etching.
A process for filling gaps during integrated circuit production, comprising:
- depositing a film over said gaps by high density plasma (HDP) deposition using a gas mixture consisting of silicon-containing, oxygen-containing, and boron-containing components.
Dependencies are inferred from the claim text.